Near-field spectroscopy and microscopy of InAs single quantum dots

被引:0
|
作者
Yu, Young-Jun [1 ]
Noh, Haneol [1 ]
Arakawa, Yasuhiko [2 ]
Jhe, Wonho [1 ]
机构
[1] Seoul Natl Univ, Sch Phys & Astron, Seoul 151747, South Korea
[2] Univ Tokyo, Res Ctr Adv Sci & Technol, Meguro Ku, Tokyo 1538505, Japan
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have reported the high-resolution photoluminescence (PL) spectroscopic and microscopic study of laterally coupled InAs/GaAs self-assembled quantum dots by using a low-temperature near-field scanning optical microscope. We have observed slightly split PL spectra, which are associated with the bonding and antibonding energy states between two coupled quantum dots.
引用
收藏
页码:387 / +
页数:2
相关论文
共 50 条
  • [41] Spectroscopy and imaging of InGaAs quantum dots using near-field optical probing
    Chavez-Pirson, A.
    Ando, H.
    Temmyo, J.
    IQEC, International Quantum Electronics Conference Proceedings, 1999,
  • [42] Near-field optical spectroscopy of localized excitons in strained CdSe quantum dots
    Flack, F
    Samarth, N
    Nikitin, V
    Crowell, PA
    Shi, J
    Levy, J
    Awschalom, DD
    PHYSICAL REVIEW B, 1996, 54 (24): : 17312 - 17315
  • [43] Near-field optical spectroscopy of localized excitons in strained CdSe quantum dots
    Flack, F.
    Samarth, N.
    Nikitin, V.
    Crowell, P. A.
    Physical Review B: Condensed Matter, 1996, 54 (24):
  • [44] Near-field study of carrier dynamics in InAs/GaAs quantum dots grown on InGaAs layers
    Tománek, P
    Dobis, P
    Benesová, M
    Grmela, L
    MATERIALS STRUCTURE & MICROMECHANICS OF FRACTURE IV, 2005, 482 : 151 - 154
  • [45] Nanophotonic gate operation using near-field energy transfer between InAs quantum dots
    Nishibayashi, Kazuhiro
    Yamamoto, Takumi
    Kawazoe, Tadashi
    Akahane, Kouichi
    Yamamoto, Naokatsu
    Ohtsu, Motoichi
    2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 2117 - +
  • [46] Fluorescence of single ZnS overcoated CdSe quantum dots studied by apertureless near-field scanning optical microscopy
    Protasenko, VV
    Kuno, M
    Gallagher, A
    Nesbitt, DJ
    OPTICS COMMUNICATIONS, 2002, 210 (1-2) : 11 - 23
  • [47] Photocurrent spectroscopy of single InAs/GaAs quantum dots
    Fasching, G
    Schrey, FF
    Brezna, W
    Smoliner, J
    Strasser, G
    Unterrainer, K
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 8, 2005, 2 (08): : 3114 - 3117
  • [48] Photoluminescence scanning near-field optical microscopy on III-V quantum dots
    Technische Universitaet Berlin, Berlin, Germany
    Physica Status Solidi (A) Applied Research, 1998, 170 (02): : 401 - 410
  • [49] Photoluminescence scanning near-field optical microscopy on III-V quantum dots
    Pahlke, D
    Poser, F
    Steimetz, E
    Pristovsek, M
    Esser, N
    Richter, W
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1998, 170 (02): : 401 - 410
  • [50] High-resolution photocurrent microscopy using near-field cathodoluminescence of quantum dots
    Yoon, Heayoung P.
    Lee, Youngmin
    Bohn, Christopher D.
    Ko, Seung-Hyeon
    Gianfrancesco, Anthony G.
    Steckel, Jonathan S.
    Coe-Sullivan, Seth
    Talin, A. Alec
    Zhitenev, Nikolai B.
    AIP ADVANCES, 2013, 3 (06):