Passively mode-locked high power Nd:GdVO4 laser with direct in-band pumping at 912 nm

被引：34
|
作者：
Nadimi, Mohammad [1 ]
Waritanant, Tanant [1 ]
Major, Arkady [1 ]
机构：
[1] Univ Manitoba, Dept Elect & Comp Engn, Winnipeg, MB R3T 5V6, Canada
来源：
LASER PHYSICS LETTERS | 2018年 / 15卷 / 01期
基金：
加拿大自然科学与工程研究理事会;
关键词：
diode-pumped lasers; passive mode locking; Nd-ion lasers; OPTICAL PARAMETRIC OSCILLATION; PUMPED ND-GDVO4 LASER; HIGH AVERAGE POWER; CONTINUOUS-WAVE; SATURABLE ABSORBER; NDYVO4; LASER; ND/YVO4; THERMAL LENS; YBKGW LASER; DIODE;
D O I：
10.1088/1612-202X/aa9633
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report on the first semiconductor saturable absorber mirror mode-locked Nd:GdVO4 laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power at 1063 nm with the pulse width of 16 ps at the repetition rate of 85.2 MHz. The optical-to-optical efficiency and slope efficiency in the mode-locked regime were calculated to be 49.6% and 67.4% with respect to the absorbed pump power, respectively. Due to the low quantum defect pumping the output power was limited only by the available pump power.
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页数：5
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