Low-temperature epitaxial growth of InP by remote plasma-assisted metalorganic chemical vapour deposition

被引：3
|
作者：
Sugino, T
Maeda, M
Kawarai, K
Shirafuji, J
机构：
[1] Department of Electrical Engineering, Fac. of Engineering Osaka University, Suita, Osaka 565
来源：
JOURNAL OF CRYSTAL GROWTH | 1996年 / 166卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(95)00479-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Epitaxial growth of InP on InP and GaAs substrates at 400 degrees C or below has been accomplished by remote-plasma-assisted metalorganic chemical vapour deposition. Trimethylindium and phosphine are decomposed by a remote-hydrogen-plasma. Homo-epitaxial growth with a specular surface can be obtained at a substrate temperature as low as 275 degrees C. It is shown from the temperature dependence of the growth rate that the activation energy of the growth is significantly reduced due to the assistance of the plasma in comparison with conventional MOCVD. Heteroepitaxial growth of InP with a smooth surface on both GaAs and Si substrates is also achieved.
引用
收藏
页码：628 / 630
页数：3
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