A 1.55-μm Waveband Optical Absorption Characterization of an Electro-Absorption Device with a Highly Stacked InAs/InGaAlAs Quantum Dot Structure

被引：0
|
作者：
Yamamoto, Naokatsu [1 ]
Akahane, Kouichi [1 ]
Umezawa, Toshimasa [1 ]
Kawanishi, Tetsuya [1 ]
机构：
[1] Natl Inst Informat & Commun Technol NICT, Koganei, Tokyo 1848795, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2015年 / E98C卷 / 08期
关键词：
quantum dot; electro-absorption; optical modulator; quantum confined stark effect; waveguide device; LASER;
D O I：
10.1587/transele.E98.C.878
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-mu m waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.
引用
收藏
页码：878 / 881
页数：4
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