Effect of built-in electric field on electron Raman scattering in InGaN/GaN coupled quantum wells

被引：16
|
作者：
Lu, Fa [1 ]
Liu, Cui-Hong [1 ]
机构：
[1] Guangzhou Univ, Coll Phys & Elect Engn, Guangzhou 510006, Guangdong, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2011年 / 50卷 / 05期
基金：
中国国家自然科学基金;
关键词：
Raman scattering; Differential cross-section; Built-in electric field; InGaN/GaN coupled quantum wells; SPONTANEOUS POLARIZATION; PIEZOELECTRIC FIELD; SINGLE;
D O I：
10.1016/j.spmi.2011.09.003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Electron Raman scattering (ERS) in wurtzite InxGaN1-x/GaN coupled quantum wells (CQWs) is investigated by effective-mass approximation and second-perturbation approach, including a strong built-in electric field (BEF) effect due to the piezoelectricity and spontaneous polarization. The dependence of differential cross-section (DCS) on structural parameters of CQWs is studied. Our results show that the strong BEF gives rise to a remarkable reduction of the DCS, which is around three orders smaller than that of the CQWs without BEF. With the presence of the BEF, the emitted photon energy decreases about 10 times as a consequence of quantum-confined Stark effect. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：582 / 589
页数：8
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