Built-in electric field effect in wurtzite InGaN/GaN coupled quantum dots

被引：22

作者：

Xia, CX ^{[1
]}

Wei, SY ^{[1
]}

机构：

[1] Henan Normal Univ, Dept Phys, Xinxiang 453007, Peoples R China

来源：

PHYSICS LETTERS A | 2005年 / 346卷 / 1-3期

基金：

中国国家自然科学基金;

关键词：

coupled quantum dots; exciton; built-in electric field; InGaN; variational approach; emission energy;

D O I：

10.1016/j.physleta.2005.07.078

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on the effective mass approximation, the built-in electric field effect on exciton states confined in wurtzite InGaN/GaN coupled quantum dots QDs) is investigated by means of a variational approach. We find that the strong built-in electric field in the wurtzite InGaN/GaN coupled QDs gives rise to a marked reduction of the effective band gap of InGaN QDs. The exciton binding energy is reduced monotonically as the barrier thickness between the two coupled wurtzite InGaN QDs is increased. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：227 / 231

页数：5

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