A Study on Optimization Design for a High-Efficiency High-Voltage Trench Gate Field-Stop IGBT

被引：0

作者：

Ahn, Byoung Sup ^{[1
]}

Chung, Hun-Suk ^{[1
]}

Nahm, Eui-Seok ^{[2
]}

Kang, Ey Goo ^{[1
]}

机构：

[1] Far East Univ, Dept Photovolta Engn, Eumseong 369700, South Korea

[2] Far East Univ, Dept Ubiquitous IT, Eumseong 369700, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 12期

关键词：

IGBT; Trench; Planar; Field-Stop; NPT;

D O I：

10.1166/jnn.2016.13699

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this paper, we have analyzed the electrical characteristics of 1200 V trench gate field stop IGBT and have compared to NPT planar type IGBT and NPT planar field stop IGBT. As a result of analyzing, we obtained superior electrical characteristics of trench gate field stop IGBT than conventional IGBT. To begin with, the breakdown voltage characteristic was showed 1460 V and on state voltage drop was showed 0.7 V. We obtained 3.5 V threshold voltage, too. To use these results, we have extracted optimal design and process parameter and designed trench gate field stop IGBT. The designed trench gate IGBT will use to inverter of renewable energy and automotive industry.

引用

页码：12839 / 12843

页数：5

共 50 条

[31] A High-Efficiency Generator of High-Power High-Voltage Pulses of Microsecond Duration
S. V. Korotkov
Yu. V. Aristov
A. L. Zhmodikov
D. A. Korotkov
Instruments and Experimental Techniques, 2021, 64 : 385 - 388
[32] FIELD OPTIMIZATION OF HIGH-VOLTAGE INSULATORS.
Abdel-Salam, Mazen
Stanek, E.Keith
IEEE Transactions on Industry Applications, 1986, IA-22 (04) : 594 - 601
[33] High-efficiency bidirectional dc-dc converter with high-voltage gain
Wai, R. -J.
Duan, R. -Y.
Jheng, K. -H.
IET POWER ELECTRONICS, 2012, 5 (02) : 173 - 184
[34] HIGH-EFFICIENCY, HIGH-VOLTAGE SOLAR-CELLS BASED ON CADMIUM TELLURIDE
RAYCHAUDHURI, PK
TREVOY, DJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C318 - C318
[35] High voltage Insulated Gate Bipolar Transistor (IGBT): Design and analysis
Kumar, A
Khanna, VK
Sood, SC
Gupta, RP
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 853 - 856
[36] Design and characterization of high-voltage self-clamped IGBT's
Shen, ZJ
Briggs, D
Robb, SP
IEEE ELECTRON DEVICE LETTERS, 1999, 20 (08) : 424 - 427
[37] An Analytical Temperature-Dependent Turn-Off Model for High-Voltage Field-Stop IGBTs Considering the Influence of Drive Circuit
Zhang, Zhiyuan
He, Hengxin
Li, Kejie
Xiang, Nianwen
Chen, Weijiang
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (08) : 9554 - 9564
[38] Design novel structure of high-voltage MOSFET with double trench gates
Yang, Hong-Jin
Jin, Tao
Feng, Quan-Yuan
MICROELECTRONICS JOURNAL, 2019, 92
[39] Ultralow ON-Resistance High-Voltage Vertical HEMT With an Accumulation Effect Trench Gate
Yang, Chao
Wu, Jun-Feng
Peng, Fu
Wei, Jie
Deng, Si-Yu
Luo, Xiao-Rong
Zhang, Bo
2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2016, : 355 - 357
[40] High-efficiency design optimization of a centrifugal pump
Heo, Man-Woong
Ma, Sang-Bum
Shim, Hyeon-Seok
Kim, Kwang-Yong
JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY, 2016, 30 (09) : 3917 - 3927

← 1 2 3 4 5 →