Enhancement of giant magneto-impedance in layered film by insulator separation

被引：90

作者：

Morikawa, T

Nishibe, Y

Yamadera, H

Nonomura, Y

Takeuchi, M

Sakata, J

Taga, Y

机构：

[1] Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi-gun, 480-11, 41-1, Yokomichi

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1996年 / 32卷 / 05期

关键词：

D O I：

10.1109/20.539303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Giant Magneto-Impedance (MI) effect of CoSiB/SiO2/Cu/SiO2/CoSiB films with line structures have been studied. Easy axes have been induced in perpendicular direction to the driving current, and the insulating SiO2 layers have prevented the driving current from penetrating into the CoSiB layers. This structure has enabled the effective occurrence of resistance change at a frequency as low as several MHz. As a result, impedance change ratios Delta Z/Z(0) = (Z(maximum) - Z(H-ext=0))/Z(H-ext=0) are much higher than that of any other layered film without insulating layers. The Delta Z/Z(0) at 20 MHz is as high as 700% at 11 Oe, and the maximum slope is 300 %/Oe.

引用

页码：4965 / 4967

页数：3

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