Tin(II) Aminothiolate and Tin(IV) Aminothiolate Selenide Compounds as Single-Source Precursors for Tin Chalcogenide Materials

被引:9
|
作者
Park, Joo-Hyun [1 ]
Kang, Seong Gu [1 ]
Lee, Young Kuk [1 ,2 ]
Chung, Taek-Mo [1 ,2 ]
Park, Bo Keun [1 ,2 ]
Kim, Chang Gyoun [1 ,2 ]
机构
[1] KRICT, Thin Film Mat Res Ctr, Daejeon 34114, South Korea
[2] UST, Dept Chem Convergence Mat, Deajeon 34113, South Korea
关键词
SULFIDE THIN-FILMS; ATOMIC LAYER DEPOSITION; MAIN-GROUP ELEMENTS; DOUBLE-BONDS; SNS; SE;
D O I
10.1021/acs.inorgchem.9b03369
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Tin aminothiolate compounds Sn-II(dmampS)(2) (1) and Sn-IV(dmampS)(2)Se (2), where dmampS = 1-(dimethylamino)-2-methylpropane-2-thiolate, were synthesized. The molecular structures of 1 and 2 reveal a seesaw and distorted trigonal-bipyramidal geometry, respectively. The H-1 NMR spectrum of 1 shows two types of resonances for the methyl groups of the alpha-carbon, methyl groups of the amino groups, and methylene groups at room temperature. On the other hand, the H-1 NMR spectrum of 2 exhibits a single resonance for each of these groups. According to variable-temperature H-1 NMR analysis, each of these two types of resonances occurring at relatively low temperatures (under 223 K for 1 and under 333 K for 2) are merged as a single resonance with increasing temperature. By using thermogravimetric and thermal decomposition analyses, the residual materials of compounds 1 and 2 are confirmed to be SnS and SnSSe, respectively. Compound 1 was subjected to a metal-organic chemical vapor deposition process, which allowed for the deposition of a dense and well-faceted orthorhombic phase SnS thin film on a SiO2/Si substrate with similar to 200 nm thickness.
引用
收藏
页码:3513 / 3517
页数:5
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