A Temperature Dependent Empirical Model for AlGaN/GaN HEMTs Including Charge Trapping and Self-Heating Effects

被引：0

作者：

Huang, Andong ^{[1
,2
]}

ZhengZhong ^{[1
,3
]}

Guo, Yongxin ^{[1
,3
]}

WenWu ^{[2
]}

机构：

[1] Natl Univ Singapore, Singapore 117583, Singapore

[2] Nanjing Univ Sci & Technol, Nanjing 210094, Jiangsu, Peoples R China

[3] Natl Univ Singapore, Suzhou Res Inst, Suzhou 215123, Peoples R China

来源：

2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2017年

基金：

中国国家自然科学基金;

关键词：

GaN HEMTs; empirical model; current dispersion; electro-thermal; surface trapping; bulk trapping;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a temperature dependent empirical model for GaN HEMTs with the consideration of charge trapping and self-heating effects. A new 13-element drain current source (I-ds) model is proposed. The current dispersion deduced by trapping and thermal effects is generally modeled by Taylor expansion, and for the first time, the dispersion related coefficients are rigorously derived to be the combination of analytical I-ds functions. The I-ds model is manifested by the accurate prediction of massive measured PIVs with various quiescent biases and power dissipation. The large signal model is implemented in Advanced Design System (ADS), and the simulations of both DC and RF characteristics well agree with the measurements.

引用

页码：244 / 247

页数：4

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