Room-Temperature Quantum Confinement Effects in Transport Properties of Ultrathin Si Nanowire Field-Effect Transistors

被引：68

作者：

Yi, Kyung Soo ^{[1
,3
]}

Trivedi, Krutarth ^{[2
]}

Floresca, Herman C. ^{[1
]}

Yuk, Hyungsang ^{[1
]}

Hu, Walter ^{[2
]}

Kim, Moon J. ^{[1
,4
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Dallas, TX 75080 USA

[2] Univ Texas Dallas, Dept Elect Engn, Dallas, TX 75080 USA

[3] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea

[4] World Class Univ, Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

来源：

NANO LETTERS | 2011年 / 11卷 / 12期

基金：

美国国家科学基金会;

关键词：

Quantum confinement effects; Si nanowires; room-temperature quantum oscillations; top-down patterning; ultrathin Si nanowire transistor; TRIGATE SOI MOSFETS; SILICON NANOWIRES; CONDUCTANCE; PERFORMANCE; MOBILITY;

D O I：

10.1021/nl203238e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Quantum confinement of carriers has a substantial impact on nanoscale device operations. We present electrical transport analysis for lithographically fabricated sub-5 nm thick Si nanowire field-effect transistors and show that confinement-induced quantum oscillations prevail at 300 K. Our results discern the basis of recent observations of performance enhancement in ultrathin Si nanowire field-effect transistors and provide direct experimental evidence for theoretical predictions of enhanced carrier mobility in strongly confined nanowire devices.

引用

页码：5465 / 5470

页数：6

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