Effect of gamma irradiation on transport of charge carriers in Cu nanowires

In this paper, we report the effect of gamma ray photons on the electrical conductivity of 100 nm Cu nanowires prepared by the technique of electrodeposition using track-etched membranes. Different fluences of photons have been used to observe the effect and in each case of post-irradiation, electrical conductivity is found to increase in a linear manner with increase in applied potential difference; however the rate of increase of conductivity is different in different cases of radiation fluence. Grain boundary scattering is of significance for the post-irradiation parabolic nature of the I-V characteristics (IVC), which are of a linear pattern following Ohm's law before irradiation. Increase or decrease in the number of charge carriers during their transport through the nanowires is the result of two competitive processes-specular and diffusive scattering of charge carriers (electrons) from grain boundaries, which are itself a region of high resistance rather than inter-grain regions. The results have been discussed in light of the Mayadas and Shatzkes (MS) model with a slight modification for irradiated nanowires.