Random telegraph noise investigation in irradiated digital SiPMs

被引：0
|
作者：
Campajola, M. [1 ,2 ]
机构：
[1] Univ Napoli Federico II, Dipartimento Fis, Naples, Italy
[2] INFN, Sez Napoli, Naples, Italy
来源：
NUOVO CIMENTO C-COLLOQUIA AND COMMUNICATIONS IN PHYSICS | 2021年 / 44卷 / 01期
关键词：
DEFECTS; SIGNALS; SILICON;
D O I：
10.1393/ncc/i2021-21021-x
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Digital SiPM is a very attractive solution for single-photon detection due to its excellent timing resolution and the additional pixel circuitry capability for signal processing. Possible applications often require the device to be operated in a high-radiation environment. In this work, we investigate the degradation of the device performances after irradiation with protons. We report on the increase of the dark count rate level and the random telegraph noise occurrence, i.e., the discrete switching of the dark count rate between two or more values. Results have been compared with the most accurate models proposed in the literature.
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收藏
页数：10
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