A structural model of Si(111)(2√3 x 2√3)R30°-Sn

被引：0
|
作者：
Ichikawa, T [1 ]
Cho, K [1 ]
Onodera, T [1 ]
Mizoguchi, A [1 ]
Ohkoshi, T [1 ]
机构：
[1] Meiji Univ, Sch Sci & Technol, Dept Phys, Tama Ku, Kawasaki, Kanagawa 2148571, Japan
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-temperature and room-temperature STM observations were performed of Si(111) (2 root3 x 2 root3)R30 degrees structure, which revealed that a 1 x 1 structure above 430 degreesC was an disordered one. A new (2 root3 x 2 root3)R30 degrees structural model is proposed, being based on obtained results.
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页码：291 / 292
页数：2
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