A structural model of Si(111)(2√3 x 2√3)R30°-Sn

被引：0
|
作者：
Ichikawa, T [1 ]
Cho, K [1 ]
Onodera, T [1 ]
Mizoguchi, A [1 ]
Ohkoshi, T [1 ]
机构：
[1] Meiji Univ, Sch Sci & Technol, Dept Phys, Tama Ku, Kawasaki, Kanagawa 2148571, Japan
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-temperature and room-temperature STM observations were performed of Si(111) (2 root3 x 2 root3)R30 degrees structure, which revealed that a 1 x 1 structure above 430 degreesC was an disordered one. A new (2 root3 x 2 root3)R30 degrees structural model is proposed, being based on obtained results.
引用
收藏
页码：291 / 292
页数：2
相关论文
共 50 条
  • [1] Structural study of Si(111)(2√3 x 3√3)R30°-Sn surfaces
    Ichikawa, T
    Cho, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (08): : 5239 - 5245
  • [2] Structural and electronic properties of the Sn/Si(111)-(2√3x2√3)R30° surface revised
    Ottaviano, L
    Profeta, G
    Petaccia, L
    Nacci, CB
    Santucci, S
    [J]. SURFACE SCIENCE, 2004, 554 (2-3) : 109 - 118
  • [3] Atomic and electronic structure of doped Si(111)(2√3 x 2√3)R30°-Sn interfaces
    Yi, Seho
    Ming, Fangfei
    Huang, Ying-Tzu
    Smith, Tyler S.
    Peng, Xiyou
    Tu, Weisong
    Mulugeta, Daniel
    Diehl, Renee D.
    Snijders, Paul C.
    Cho, Jun-Hyung
    Weitering, Hanno H.
    [J]. PHYSICAL REVIEW B, 2018, 97 (19)
  • [4] Ultrafast Atomic Diffusion Inducing a Reversible (2√3x2√3)R30° ⇆ (√3x√3)R30° Transition on Sn/Si(111) : B
    Srour, W.
    Trabada, Daniel G.
    Martinez, J. I.
    Flores, F.
    Ortega, J.
    Abuin, M.
    Fagot-Revurat, Y.
    Kierren, B.
    Taleb-Ibrahimi, A.
    Malterre, D.
    Tejeda, A.
    [J]. PHYSICAL REVIEW LETTERS, 2015, 114 (19)
  • [5] The model of the magnesium silicide phase (2/3√3 x 2/3√3)-R30° on Si(111)
    Galkin, Konstantin N.
    Kumar, Mahesh
    Shivaprasad, S. M.
    Galkin, Nikolay G.
    [J]. ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010), 2011, 11 : 47 - 50
  • [6] Atomic and electronic structure of the (2√3 x 2√3)R30° strained Sn reconstruction on Ge/Si(111)
    Srour, W.
    Tejeda, A.
    Stoffel, M.
    Abuin, M.
    Fagot-Revurat, Y.
    Le Fevre, P.
    Taleb-Ibrahimi, A.
    Malterre, D.
    [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2014, 195 : 174 - 178
  • [7] Insulating ground state of Sn/Si(111)-(√3x√3)R30°
    Modesti, S.
    Petaccia, L.
    Ceballos, G.
    Vobornik, I.
    Panaccione, G.
    Rossi, G.
    Ottaviano, L.
    Larciprete, R.
    Lizzit, S.
    Goldoni, A.
    [J]. PHYSICAL REVIEW LETTERS, 2007, 98 (12)
  • [8] The structural analysis of Cu(111)-Te (√3 x √3)R30° and (2√3 x 2√3)R30° surface phases by quantitative LEED and DFT
    Lahti, M.
    Chaudhuri, A.
    Pussi, K.
    Hesp, D.
    McLeod, I. M.
    Dhanak, V. R.
    King, M. O.
    Kadodwala, M.
    MacLaren, D. A.
    [J]. SURFACE SCIENCE, 2014, 622 : 35 - 43
  • [9] The stability and electro-oxidation of carbon monoxide on model electrocatalysts:: Pt(111)-Sn(2 x 2) and Pt(111)-Sn(√/3 x \√3)R30°
    Hayden, BE
    Rendall, ME
    South, O
    [J]. JOURNAL OF MOLECULAR CATALYSIS A-CHEMICAL, 2005, 228 (1-2) : 55 - 65
  • [10] Scanning tunneling spectroscopy investigation of the (√3 x √3)R30° Sn/Si(111) α and γ surfaces
    Ressel, B
    Di Teodoro, C
    Profeta, G
    Ottaviano, L
    Cháb, V
    Prince, KC
    [J]. SURFACE SCIENCE, 2004, 562 (1-3) : 128 - 136
12345