Complemental theory for vertical transport in semiconductor superlattices

被引:0
|
作者
Morifuji, M [1 ]
Sakamoto, A [1 ]
Hamaguchi, C [1 ]
机构
[1] Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan
关键词
D O I
10.1109/LDS.1998.714535
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present a! unified picture which can describe transport phenomena! independent on applied electric field. Based on the unified picture and by means of the Monte Carlo simulation, we calculate drift velocities of electrons in a super lattice, taking LO phonon scattering and impurity scattering into account. When impurity density is low or electric field is high, electrons are easily accelerated to the edge of the Brillouin zone, and Bloch oscillation is realized. As a result of the Bloch oscillation, localized Stark-ladder states are formed and hopping transport between the Stark-ladder states is realized. With increasing impurities, electrons are scattered frequently and delocalization of Start;ladder states takes place, in this case, band transport described in the momentum-space becomes important. Crossover between band transport and hopping transport is investigated and discussed.
引用
收藏
页码:62 / 66
页数:5
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