RF W-band wafer-to-wafer transition

被引：10
|
作者：
Herrick, KJ [1 ]
Katehi, LPB
机构：
[1] Raytheon RF Components, Raytheon Commercial Elect, Andover, MA 01810 USA
[2] Univ Michigan, Dept Elect Engn & Comp Sci, Radiat Lab, Ann Arbor, MI 48109 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2001年 / 49卷 / 04期
关键词：
micromachining; microwave circuits; packaging; wafer bonding;
D O I：
10.1109/22.915432
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Multiwafer silicon designs must provide an avenue for electrical signals to flow from wafer to wafer, For this purpose, a two-layer electrical bond is proposed to provide electrical connection between two coplanar waveguides printed on the adjacent faces of two vertically stacked silicon wafers. In addition to serving as a versatile low-temperature thermocompression wafer bond, loss of approximately 0.1 dB is measured for this novel compact packaged wafer-to-wafer transition from 75 to 110 GHz.
引用
收藏
页码：600 / 608
页数：9
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