RF W-band wafer-to-wafer transition

被引：0
|
作者：
Univ of Michigan, Ann Arbor, United States [1 ]
机构：
来源：
IEEE MTT-S International Microwave Symposium Digest | 2000年 / 1卷
关键词：
Bonding - Capacitance - Computer simulation - Electric conductivity - Electric impedance - Insertion losses - Micromachining - Permittivity - Transmission line theory - Waveguides;
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学科分类号：
摘要：
Multiwafer silicon designs must provide an avenue for electrical signals to flow from wafer to wafer. For this purpose, a two-layer electrical bond is proposed to provide electrical connection between two coplanar waveguides on vertically stacked silicon wafers. Loss of approximately 0.1 dB is measured for this compact, packaged transition at W-band.
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页码：73 / 76
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