Spin-on stacked films for low-keff dielectrics

被引：0
|
作者：
Thomas, ME [1 ]
机构：
[1] Honeywell Elect Mat, Wafer Fabricat Mat, Sunnyvale, CA 94089 USA
来源：
SOLID STATE TECHNOLOGY | 2001年 / 44卷 / 07期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The 2000 International Technology Roadmap for Semiconductors has identified the production requirements of low-k dielectrics extending over three device generations. The question facing the industry is "What is the best method for depositing low-k films: spin-on or CVD?" This article proposes a pathway that will address the capability, extendibility, and manufacturability options afforded by the use of spin-on low-k dielectrics in meeting the ITRS requirements and 300mm production needs.
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页码：105 / +
页数：5
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