Interdigitated terahertz emitters

被引：14
|
作者：
Acuna, G. P. [1 ]
Buersgens, F. F. [1 ]
Lang, C. [1 ]
Handloser, M. [1 ]
Guggenmos, A. [1 ]
Kersting, R. [1 ]
机构：
[1] Univ Munich, Photon & Optoelect Grp, D-80799 Munich, Germany
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 03期
关键词：
D O I：
10.1049/el:20082905
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A large aperture terahertz (THz) emitter is presented. The planar photoconducting GaAs device consists of a periodical interdigitated Schottky structure. Additional trenches in the GaAs have double periodicity. They are required for far-field THz emission. Terahertz field strengths of 15 V/cm were achieved.
引用
收藏
页码：229 / 230
页数：2
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