Treatment of tantalum using argon glow discharge plasma for applied purposes
被引:1
|
作者:
Talab, A. A.
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机构:
Egyptian Atom Energy Author, Nucl Res Ctr, Plasma Phys & Nucl Fus Dept Cyclotron Facil, Cairo, EgyptEgyptian Atom Energy Author, Nucl Res Ctr, Plasma Phys & Nucl Fus Dept Cyclotron Facil, Cairo, Egypt
Talab, A. A.
[1
]
Abido, Amr M. N.
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机构:
Egyptian Atom Energy Author, Nucl Res Ctr, Reactors Dept Cyclotron Facil, Cairo, EgyptEgyptian Atom Energy Author, Nucl Res Ctr, Plasma Phys & Nucl Fus Dept Cyclotron Facil, Cairo, Egypt
Abido, Amr M. N.
[2
]
Ismail, M. I.
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机构:
Zagazig Univ, Fac Engn, Zagazig, Egypt
Univ Hertfordshire Hosted, Global Acad Fdn, Sch Engn & Comp Sci, Cairo, EgyptEgyptian Atom Energy Author, Nucl Res Ctr, Plasma Phys & Nucl Fus Dept Cyclotron Facil, Cairo, Egypt
Ismail, M. I.
[3
,4
]
机构:
[1] Egyptian Atom Energy Author, Nucl Res Ctr, Plasma Phys & Nucl Fus Dept Cyclotron Facil, Cairo, Egypt
[2] Egyptian Atom Energy Author, Nucl Res Ctr, Reactors Dept Cyclotron Facil, Cairo, Egypt
DC plasma discharge;
Batorm;
tantalum element;
hardness;
cleaning;
applications of glow discharge on material science;
D O I:
10.1142/S0217979222501016
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The main purpose of this work is to use a low-cost DC plasma discharge to enhance the material properties. The source of the DC glow discharge plasma was the Batorm device. By using a low-pressure argon gas, the best operating conditions of the plasma were obtained at a pressure 3 x 10(-2) mbar and a breakdown voltage of 160 V. Electrical parameters of the plasma have been experimentally estimated at two different pressures 3 x 10(-2) and 4 x 10(-2) mbar. Tantalum material has been chosen to be treated along this work due to its great importance in industry. In addition, it is used as a cathode for the ion source inside the Egyptian cyclotron at the Egyptian Atomic Energy Authority (EAEA). A U-shaped tantalum sample, exactly like the cyclotron filament, was exposed to plasma created from 3 x 10(-2) mbar and 250 V for 30 min. At these low conditions, the obtained results were promising where the surface treatment of the sample caused cleaning and increased its hardness.
机构:
Departamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, BrazilDepartamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, Brazil
Durrant, Steven F.
Baranauskas, Vitor
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Departamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, BrazilDepartamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, Brazil
Baranauskas, Vitor
Peterlevitz, Alfredo
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Departamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, BrazilDepartamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, Brazil
Peterlevitz, Alfredo
Bin Li, Bin
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Departamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, BrazilDepartamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, Brazil
Bin Li, Bin
Tosin, Marcelo C.
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Departamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, BrazilDepartamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, Brazil
Tosin, Marcelo C.
Rangel, Elidiane C.
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Depto. de Física Aplicada, IFGW, Univ. Estadual C., São Paulo, BrazilDepartamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, Brazil
Rangel, Elidiane C.
Wang, J.
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Depto. de Física Aplicada, IFGW, Univ. Estadual C., São Paulo, BrazilDepartamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, Brazil
Wang, J.
Castro, Sandra G.
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Depto. de Física Aplicada, IFGW, Univ. Estadual C., São Paulo, BrazilDepartamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, Brazil
Castro, Sandra G.
Bica De Moraes, Mário A.
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Depto. de Física Aplicada, IFGW, Univ. Estadual C., São Paulo, BrazilDepartamento de Semicondutores, Instrumentos Fotonica, Faculdade E., São Paulo, Brazil
机构:
Univ Autonoma Estado de Mexico, Fac Ciencias, Mexico City, Estado De Mexic, MexicoUniv Autonoma Estado de Mexico, Fac Ciencias, Mexico City, Estado De Mexic, Mexico
Torres, C.
Reyes, P. G.
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机构:
Univ Autonoma Estado de Mexico, Fac Ciencias, Mexico City, Estado De Mexic, MexicoUniv Autonoma Estado de Mexico, Fac Ciencias, Mexico City, Estado De Mexic, Mexico
Reyes, P. G.
Castillo, F.
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机构:
Univ Nacl Autonoma Mexico, Inst Ciencias Nucl, Mexico City, DF, MexicoUniv Autonoma Estado de Mexico, Fac Ciencias, Mexico City, Estado De Mexic, Mexico
Castillo, F.
Martinez, H.
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机构:
Univ Nacl Autonoma Mexico, Inst Ciencias Fis, Cuernavaca 62210, Morelos, MexicoUniv Autonoma Estado de Mexico, Fac Ciencias, Mexico City, Estado De Mexic, Mexico
Martinez, H.
14TH LATIN AMERICAN WORKSHOP ON PLASMA PHYSICS (LAWPP 2011),
2012,
370
机构:
Xi An Jiao Tong Univ, Sch Life Sci & Technol, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Sch Life Sci & Technol, Xian 710049, Peoples R China
Yang, Liqing
Chen, Jierong
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Xi An Jiao Tong Univ, Sch Life Sci & Technol, Xian 710049, Peoples R China
Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Sch Life Sci & Technol, Xian 710049, Peoples R China
Chen, Jierong
Gao, Junling
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Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Sch Life Sci & Technol, Xian 710049, Peoples R China
Gao, Junling
Guo, Yafei
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机构:
Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Sch Life Sci & Technol, Xian 710049, Peoples R China