Electron field emission from nanostructured cubic boron nitride islands

被引：30
|
作者：
Teii, Kungen [1 ,2 ]
Matsumoto, Seiichiro [3 ,4 ]
Robertson, John [2 ]
机构：
[1] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan
[2] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England
[3] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[4] Ceram Forum Co Ltd, Taitoh Ku, Tokyo 1100016, Japan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期
关键词：
D O I：
10.1063/1.2830006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nanocrystal-assembled cubic boron nitride (cBN) islands are formed by using low-energy (similar to 20 eV) ion irradiation in an inductively coupled fluorine-containing plasma. The temporal evolution of surface morphology and roughness reveals three-dimensional island growth for initial sp(2)-bonded BN and subsequent cBN, accompanied by a high frequency of renucleation. The formation of cBN islands enhances the field emission and reduces the turn-on field down to around 9 V/mu m due to an increase in the island-related field. The results demonstrate the high potential of cBN for field emitters, comparable to other wide band gap semiconductors. (C) 2008 American Institute of Physics.
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