Effect of nitrogen doping temperature on the resistance stability of ITO thin films

被引：31
|
作者：
Yang, Shenyong [1 ]
Zhang, Congchun [1 ]
Yang, Zhuoqing [1 ]
Yao, Jinyuan [1 ]
Wang, Hong [1 ]
Ding, Guifu [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Natl Key Lab Sci & Technol Micro Nano Fabricat, 800 Dongchuan Rd, Shanghai 200240, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2019年 / 778卷
关键词：
ITO thin film; High-temperature strain gages; Nitrogen doping; Resistance stability; TRANSPARENT;
D O I：
10.1016/j.jallcom.2018.11.126
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Indium tin oxide (ITO) thin films were fabricated by magnetron sputtering in the mixture of argon and oxygen. Nitrogen doping was achieved by a two-step annealing process. It was found that with increasing temperature of the first-step treatment in N-2 atmosphere up to 800 degrees C, more nitrogen was doped into ITO thin films. After subsequent second-step annealing in air at 1200 degrees C, the ITO thin films had the most stable grain size and the highest content Sn4+ donors. This makes ITO thin film subjected to annealing in N-2 at 800 degrees C have the excellent resistance stability for high temperature (1200 degrees C) strain measurement. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：90 / 96
页数：7
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