Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

被引:110
|
作者
Xu, Shuigang [1 ,2 ]
Wu, Zefei [1 ,2 ]
Lu, Huanhuan [1 ,2 ]
Han, Yu [1 ,2 ]
Long, Gen [1 ,2 ]
Chen, Xiaolong [1 ,2 ]
Han, Tianyi [1 ,2 ]
Ye, Weiguang [1 ,2 ]
Wu, Yingying [1 ,2 ]
Lin, Jiangxiazi [1 ,2 ]
Shen, Junying [1 ,2 ]
Cai, Yuan [1 ,2 ]
He, Yuheng [1 ,2 ]
Zhang, Fan [3 ]
Lortz, Rolf [1 ,2 ]
Cheng, Chun [4 ,5 ]
Wang, Ning [1 ,2 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Hong Kong Univ Sci & Technol, Ctr Quantum Mat 1D 2D, Hong Kong, Hong Kong, Peoples R China
[3] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA
[4] South Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
[5] South Univ Sci & Technol, Shenzhen Key Lab Nanoimprint Technol, Shenzhen 518055, Peoples R China
来源
2D MATERIALS | 2016年 / 3卷 / 02期
关键词
transition metal dichalcogenides; h-BN encapsulation; field-effect transistor; contact resistance; quantum oscillations; FIELD-EFFECT TRANSISTORS; ELECTRONIC TRANSPORT; MONOLAYER; GRAPHENE; MOBILITY; PHOTOLUMINESCENCE; DEVICES;
D O I
10.1088/2053-1583/3/2/021007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively studied TMDCs in recent years, including MoS2, MoSe2, WSe2, WS2, and 2H-MoTe2. Low electrical contact resistance is achieved at 2 K. All of the few-layerTMDCdevices studied show excellent performance with remarkably improved field-effect mobilities ranging from 2300 to 16 000 cm 2 V-1 s(-1), as verified by the high carrier mobilities extracted from Hall effect measurements. Moreover, both high-mobility n-type and p-typeTMDCchannels can be realized by simply using appropriate contact metals. Prominent Shubnikov-de Haas oscillations have been observed and investigated in these high-quality TMDC devices.
引用
收藏
页数:9
相关论文
共 50 条
  • [22] THE ADIABATIC TRANSPORT AND THE OHMIC TRANSPORT OF QUANTUM POINT CONTACTS IN SERIES
    JIANG, Q
    SHEN, SQ
    TAO, RB
    PHYSICS LETTERS A, 1991, 152 (1-2) : 101 - 104
  • [23] Mechanistic insights into low-temperature epitaxial growth of aluminum nitride films on layered transition metal dichalcogenides
    Hsieh, Tung Chen
    Liao, Yu-Ming
    Hsu, Wei-Fan
    Kao, Hui-Ling
    Huang, Yu-Che
    Chang, Shu-Jui
    Chen, Yu-Shian
    Hsieh, Ya-Ping
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2022, 40 (06):
  • [24] Universal Broadening of the Light Cone in Low-Temperature Transport
    Bertini, Bruno
    Piroli, Lorenzo
    Calabrese, Pasquale
    PHYSICAL REVIEW LETTERS, 2018, 120 (17)
  • [25] Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors
    Sengupta, Parijat
    Tan, Yaohua
    Klimeck, Gerhard
    Shi, Junxia
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 29 (40)
  • [26] LOW-TEMPERATURE CURRENT TRANSPORT OF SN-GAAS CONTACTS
    GAO, JR
    HEIDA, JP
    VANWEES, BJ
    BAKKER, S
    KLAPWIJK, TM
    ALPHENAAR, BW
    APPLIED PHYSICS LETTERS, 1993, 63 (03) : 334 - 336
  • [27] Low-temperature transport through a quantum dot
    Glazman, LI
    Pustilnik, M
    NANOPHYSICS: COHERENCE AND TRANSPORT, 2005, 81 : 427 - +
  • [28] Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures
    Wang, Xiaowei
    Huang, Hsien-Chih
    Green, Bruce
    Gao, Xiang
    Rosenmann, Daniel
    Li, Xiuling
    Shi, Junxia
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2020, 38 (06):
  • [29] Low-temperature behaviors of multilayer MoS2 transistors with ohmic and Schottky contacts
    Choi, Woong
    Yin, Demin
    Choo, Sooho
    Jeong, Seok-Hwan
    Kwon, Hyuk-Jun
    Yoon, Youngki
    Kim, Sunkook
    APPLIED PHYSICS LETTERS, 2019, 115 (03)
  • [30] Quasiparticles and quantum phase transition in universal low-temperature properties of heavy-fermion metals
    Shaginyan, V. R.
    Msezane, A. Z.
    Stephanovich, V. A.
    Kirichenko, E. V.
    EUROPHYSICS LETTERS, 2006, 76 (05): : 898 - 904