The Solubility and Temperature Dependence of Resistivity for Aluminum-Doped Zinc Oxide Ceramic

被引：21
|
作者：
Zhang, Yulong [1 ]
Wang, Weiyan [1 ]
Tan, Ruiqin [2 ]
Yang, Ye [1 ]
Zhang, Xianpeng [1 ]
Cui, Ping [1 ]
Song, Weijie [1 ]
机构：
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[2] Ningbo Univ, Sch Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China
来源：
INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY | 2012年 / 9卷 / 02期
基金：
浙江省自然科学基金;
关键词：
GRAIN-GROWTH; THERMOELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; ZNO; AL; LIMIT;
D O I：
10.1111/j.1744-7402.2011.02666.x
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The solubility of Aluminum (Al)-doped ZnO ceramic was determined to be 0.9 atomic ratio percent (at.%), and the ZnAl2O4 was formed once the Al content achieved 1.0 at.% or above. The resistivity decreased at an Al content of 00.8 at.% to a minimum of 1.45 x 10-3 O, while increased at a range of 1.06.0 at.%. The resistivity increased and decreased with temperature when the Al content was below and above 2.0 at.%, respectively. The activation energy increased from -489.5 to -65.0 eV and from 66.0 to 293.8 eV when the Al doping content was below and above 2.0 at.%.
引用
收藏
页码：374 / 381
页数：8
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