Mechanism of carrier transport in aluminum-doped zinc oxide

被引：60
|
作者：
Tahar, RBH
Tahar, NBH
机构：
[1] Univ Sud, Dept Chim Phys, Inst Preparatoire Etud Ingn Sfax, Stax 3000, Tunisia
[2] Univ Ctr, Dept Chim, Fac Sci Monastir, Monastir, Tunisia
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 08期
关键词：
D O I：
10.1063/1.1509083
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The conduction mechanism in aluminum-doped zinc oxide has been studied. Structural investigation shows that crystallographic orientation as well as grain boundary scattering can be neglected. Based on the analysis of the Hall mobility, it has been found that scattering at neutral and ionized impurities dominates the mobility. Further improvement in the mobility can be achieved by lowering the density of neutral impurities through careful control of the film processing parameters. (C) 2002 American Institute of Physics.
引用
收藏
页码：4498 / 4501
页数：4
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