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Enhancing the performance of CZTSSe solar cells with Ge alloying

被引：183
|
作者：
Guo, Qijie [1 ]
Ford, Grayson M. [1 ]
Yang, Wei-Chang [1 ]
Hages, Charles J. [1 ]
Hillhouse, Hugh W. [1 ,2 ]
Agrawal, Rakesh [1 ]
机构：
[1] Purdue Univ, Sch Chem Engn, W Lafayette, IN 47906 USA
[2] Univ Washington, Dept Chem Engn, Seattle, WA 98195 USA
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2012年 / 105卷
关键词：
CZTS; CZTSSe; Earth abundant; Thin film solar cell; Non-vacuum;
D O I：
10.1016/j.solmat.2012.05.039
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The ability to alloy Cu2ZnSn(S,Se)(4) with Ge provides a unique ability to band-gap engineer the absorber film by controlling the relative cation ratios. In here, a preliminary study on adjusting the Ge to Sn ratio is shown to significantly improve the device performance of CZTSSe thin film solar cells. CZTGeSSe solar cell with total area power conversion efficiency as high as 8.4% has been realized using a nanocrystal-based thin film deposition process. The selenized CZTGeSSe thin film exhibits a bi-layer structure where the thin sintered large-grain layer could be responsible for the poor red-response in external quantum efficiency of the resulting solar cell. (c) 2012 Elsevier B.V. All rights reserved.
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收藏
页码：132 / 136
页数：5
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