Evaluation of a Pulsed Ultraviolet Light-Emitting Diode for Triggering Photoconductive Semiconductor Switches

被引:3
|
作者
Mauch, Daniel [1 ]
Hettler, Cameron [1 ]
Sullivan, William W. [1 ]
Neuber, Andreas A. [1 ]
Dickens, James [1 ]
机构
[1] Texas Tech Univ, Dept Elect & Comp Engn, Ctr Pulsed Power & Power Elect, Lubbock, TX 79409 USA
关键词
Light-emitting diode (LED); photoconducting devices; photoconductivity; power semiconductor switches; pulsed power; silicon carbide; SIC JFET; POWER; LEDS;
D O I
10.1109/TPS.2015.2435744
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The power output, forward voltage, conversion efficiency, and spectral characteristics of a 365 nm ultraviolet light-emitting diode (LED) were measured for applications of triggering wide-bandgap photoconductive switches for pulsed power applications. Pulsed currents through the LED ranged from 125 mA up to 2.2 A at widths from 10 mu s up to several seconds. Using time-resolved electroluminescence spectroscopy, peak emission was observed to occur at 368.5 nm for short pulses with a red-shift to 371.8 nm for pulses 8 s in duration. A peak light output of 4.1 W was measured for short pulses (<50 mu s) of 2.12 A, corresponding to six times the rated output specification. The LED was used to trigger a high-voltage photoconductive semiconductor switch (PCSS) at voltages up to 6 kV into a high-impedance load. The 365 nm LED is a promising candidate for optical triggering of PCSS devices.
引用
收藏
页码:2182 / 2186
页数:5
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