Influence of hydrogen annealing on the properties of hafnium oxide thin films

被引：45
|
作者：
Al-Kuhaili, M. F. [1 ]
Durrani, S. M. A. [1 ]
Bakhtiari, I. A. [1 ]
Dastageer, M. A. [1 ]
Mekki, M. B. [1 ]
机构：
[1] King Fahd Univ Petr & Minerals, Dept Phys, Dhahran 31261, Saudi Arabia
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2011年 / 126卷 / 03期
关键词：
Hafnium oxide; e-Beam evaporation; Hydrogen annealing; Structural properties; Chemical properties; Optical properties; Electrical properties; ION-ASSISTED DEPOSITION; OPTICAL-PROPERTIES; HFO2; FILMS; REACTIVE EVAPORATION; INTERFACE STATES; (100)SI/HFO2; STABILITY; CONSTANTS; DENSITIES; THICKNESS;
D O I：
10.1016/j.matchemphys.2011.01.036
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of hafnium oxide were deposited by electron beam evaporation, and were subsequently annealed in hydrogen. X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, photoluminescence, spectrophotometry, and current-voltage measurements were performed to investigate the structural, chemical, optical, and electrical properties of the films. As-deposited films were amorphous and nearly stoichiometric. Annealing led to crystallization of the films, and reduction of stoichiometry. Photoluminescence measurements revealed the presence of oxygen-related defects. Optically, the films were transparent with a wide band gap, and this was not affected by hydrogen annealing. Moreover, the films were suitable as anti-reflection coatings on silicon. The electrical resistivity of the films was significantly reduced as a result of annealing. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：515 / 523
页数：9
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