Excited states of the A free exciton in CuInS2

被引：24

作者：

Yakushev, M. V. ^{[1
]}

Martin, R. W. ^{[1
]}

Mudryi, A. V. ^{[2
]}

Ivaniukovich, A. V. ^{[2
]}

机构：

[1] Univ Strathclyde, Dept Phys, SUPA, Glasgow G4 0NG, Lanark, Scotland

[2] Inst Solid State & Semicond Phys, Minsk 220072, BELARUS

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2896301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality CuInS2 single crystals, grown by the traveling heater method in an indium solvent, were studied using reflectance and photoluminescence at 4.2 K. The first, E-A(n=2)=1.5494 eV, and second, E-A(n=3)=1.5532 eV, excited states of the A free exciton have been observed in the photoluminescence spectra. Accurate values of the A exciton binding energy E-FE(A)=18.5 meV and Bohr radius a(B)(A)=3.8 nm, bandgap E-g=1.5540 eV at 4.2 K and static dielectric constant epsilon=10.2 have been derived assuming a hydrogenic model. (c) 2008 American Institute of Physics.

引用

页数：3

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