Reverse biased porous silicon light emitting diodes for optoelectronics

An overview of reverse biased porous silicon (PS) light emitting diodes (LEDs) is presented. Emphasis is given to LED designs and technological processes for PS fabrication. Basic parameters of PS LEDs are analyzed with particular attention to their application in optoelectronics. A silicon integrated optoelectronic unit including a reverse biased PS LED connected with a photodetector by an alumina waveguide is considered for intra-chip optical interconnects. The other use the reverse biased PS LEDs in microdisplay devices is also discussed. Advantages and disadvantages of PS LEDs for optoelectronics are exposed.