High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires

被引：8
|
作者：
Yang, Po-Yu [1 ,2 ]
Wang, Jyh-Liang [3 ]
Tsai, Wei-Chih [4 ]
Wang, Shui-Jinn [5 ]
Lin, Jia-Chuan [6 ]
Lee, I-Che [1 ,2 ]
Chang, Chia-Tsung [1 ,2 ]
Cheng, Huang-Chung [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan
[3] Ming Chi Univ Technol, Dept Elect Engn, Taipei 24301, Taiwan
[4] Natl Formosa Univ, Dept Elect Engn, Yunlin 63201, Taiwan
[5] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
[6] St Johns Univ, Dept Elect Engn, Taipei 25135, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 04期
关键词：
CHEMICAL-VAPOR-DEPOSITION; ALIGNED CARBON NANOTUBES; LOW-TEMPERATURE; ELECTRON-EMISSION; GROWTH; NANORODS; SILICON; ZNO;
D O I：
10.1143/JJAP.50.04DN07
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Aluminum-doped zinc oxide (AZO) nanowire (NW) arrays incorporating an offset thin-film transistor (offset-TFT) have been proposed to achieve high field-emission (FE) stability. The AZO NW field emission arrays (FEAs) were hydrothermally grown at a low temperature of 85 degrees C. The uncontrolled AZO NW FEAs demonstrated superior FE characteristics (i.e., turn-on field of similar to 2.17 V/mu m and threshold field of similar to 3.43 V/mu m) compared with those of the conventional CNT FEAs grown at a temperature below 600 degrees C. However, uncontrolled AZO NW FEAs show a larger current fluctuation of 15.6%. Therefore, the offset-TFTs were used to control the AZO NW FEAs. Consequently, the fluctuation of AZO NW FEAs could be significantly reduced to less than 2%. This novel field emission device exhibits good emission stability, low-voltage controllability, low-temperature processing, and structural simplicity, making it promising for applications in flat panel displays. (C) 2011 The Japan Society of Applied Physics
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页数：5
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