MOVPE growth of Si-doped GaAs and AlxGa1-xAs using tertiarybutylarsine (TBA) in pure N2 ambient

The effects of Si-doping on the growth of GaAs and AlxGa1-xAs alloy in MOVPE system using tertiarybutylarsine (TBA) in a pure N-2 ambient have been studied. For Si-doped GaAs, the electron carrier concentration increases to a maximum of 3.4 x 10(18) cm(-3) with the increase of SiH4 flow rate, and then decreases with any further increase of SiH4 flow rate. For AlxGa1-x,As with Al concentration x = 0.52 the electron carrier concentration reached to a maximum of 3.3 x 10(17) cm(-3). The AlxGa1-xAs alloy grown in a nitrogen ambient has a lower Al concentration than the one that grown normally in an H-2 ambient. It has also been found that the Al content of the alloy decreases with an increase of silane concentration for a constant group V/III ratio during the MOVPE growth. (C) 2003 Elsevier Ltd. All rights reserved.