MOVPE growth of Si-doped GaAs and AlxGa1-xAs using tertiarybutylarsine (TBA) in pure N2 ambient

被引：4
|
作者：
Huang, GS [1 ]
Tang, XH [1 ]
Zhang, BL [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Microelect Div, Photon Res Ctr, Singapore 639798, Singapore
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2003年 / 6卷 / 04期
关键词：
MOCVD; Si-doping; GaAs; AlxGa1-xAs; nitrogen carrier gas;
D O I：
10.1016/S1369-8001(03)00063-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of Si-doping on the growth of GaAs and AlxGa1-xAs alloy in MOVPE system using tertiarybutylarsine (TBA) in a pure N-2 ambient have been studied. For Si-doped GaAs, the electron carrier concentration increases to a maximum of 3.4 x 10(18) cm(-3) with the increase of SiH4 flow rate, and then decreases with any further increase of SiH4 flow rate. For AlxGa1-x,As with Al concentration x = 0.52 the electron carrier concentration reached to a maximum of 3.3 x 10(17) cm(-3). The AlxGa1-xAs alloy grown in a nitrogen ambient has a lower Al concentration than the one that grown normally in an H-2 ambient. It has also been found that the Al content of the alloy decreases with an increase of silane concentration for a constant group V/III ratio during the MOVPE growth. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：171 / 174
页数：4
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