SCH doping effects in a 1.55μm InGaAsP/InGaAsP MQW electro-absorption modulator

被引：0
|
作者：
Shim, J [1 ]
Eo, Y [1 ]
Jang, D [1 ]
机构：
[1] Hanyang Univ, Sch Elect Engn & Comp Sci, Ansan 425791, Kyungki Do, South Korea
来源：
CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST | 2001年
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The effects of n-doped SCH region length t(n) as well as the general structure parameters in EA modulators were thoroughly analyzed. It was found that t(n) played a crucial role to achieve high-performances in addition to the detuning Deltalambda.
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页码：82 / 83
页数：2
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