Depth profile analysis of porous Si film by ERDA using a Delta E-E detector telescope

被引：3
|
作者：
Avasthi, DK
Hui, SK
Subramaniyam, ET
Mehta, BR
机构：
[1] UNIV CALCUTTA,DEPT PHYS,CALCUTTA 700009,W BENGAL,INDIA
[2] INDIAN INST TECHNOL,DEPT PHYS,THIN FILM LAB,NEW DELHI 110067,INDIA
来源：
VACUUM | 1996年 / 47卷 / 09期
关键词：
D O I：
10.1016/0042-207X(96)00154-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A complete analytical study as well as depth profiling of the constituent elements of a porous Si layer have been carried our by elastic recoil detection analysis using 100 MeV Ag ions and a Delta E-E detector telescope. Quantitative estimates of elements H, C, N, O, F, Mg and Si in a porous Si film have been made. The analysis of data indicates that the lowest detection limit of the technique is 8 x 10(-4) at% with an inaccuracy of 15%. Copyright (C) 1996 Elsevier Science Ltd.
引用
收藏
页码：1061 / 1064
页数：4
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