Electrical properties of Nb-doped BaTiO3

被引：34
|
作者：
Kowalski, K
Ijjaali, M
Bak, T
Dupre, B
Nowotny, J [1 ]
Rekas, M
Sorrell, CC
机构：
[1] Univ New S Wales, Sch Mat Sci & Engn, Ctr Mat Res Energy, Sydney, NSW 2052, Australia
[2] Univ Nancy 1, Fac Sci, Lab Chim Solide Mineral, F-54506 Vandoeuvre Nancy, France
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2001年 / 62卷 / 03期
关键词：
oxides; defects; dielectric properties; diffusion; transport properties;
D O I：
10.1016/S0022-3697(00)00213-4
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
This paper reports the results of the electrical conductivity measurements for Nb-doped BaTiO3 ceramics in the temperature range 1073-1373 K in both oxidizing and reducive atmospheres. The electrical conductivity was also applied to monitor the formation of Nb-doped BaTiO3. It is shown that the solid state reaction for the system BaTiO3-Nb2O3 takes place at 1573 K, but annealing at 1623 K is required to produce specimen of reproducible electrical properties. The solubility limit of Nb in stoichiometric BaTiO3 (Ba/Ti = 1) at 1573 K in air is 5 at%. The p(O-2) exponent of the electrical conductivity was determined (1/n(sigma) = -1/3.9). This exponent is consistent with the defect disorder model of Nb-doped BaTiO3 derived assuming that ionic charge compensation prevails. The activation energy of the electrical conductivity for Nb-doped BaTiO3 depends on both p(Oz) and Nb content. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：543 / 551
页数：9
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