Magnetoresistance in step-edge junctions based on La0.7Sr0.3MnO3 films

被引：7
|
作者：
Bosak, AA
Dubourdieu, C
Chaudouët, P
Sénateur, JP
Fournier, T
机构：
[1] Ecole Natl Super Phys Grenoble, Mat & Genie Phys Lab, CNRS, UMR 5628, F-38402 St Martin Dheres, France
[2] CNRS, Ctr Rech Tres Basses Temp, F-38042 Grenoble 9, France
[3] Moscow MV Lomonosov State Univ, Dept Mat Sci, Moscow 119899, Russia
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 08期
关键词：
D O I：
10.1063/1.1606523
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The magnetoresistance of step-edge junctions based on La0.7Sr0.3MnO3 films was investigated using a Wheatstone bridge geometry. Two types of step-edge structures were prepared: The step was either fabricated by ion-beam etching of SrTiO3 (001) substrates or by wet-chemical etching of an insulating NdMnO3 layer deposited on SrTiO3 (001). Both the magnetoresistive and insulating layers were deposited by injection-metalorganic chemical vapor deposition. The temperature dependence of the magnetoresistance was explored for both types of junctions in different field orientations. The largest low-field magnetoresistance was obtained when the step was formed directly in the substrate; it was observed up to room temperature (similar to1% for an applied field of similar to0.05 T) and at 40 K, it increased similar to12% under an applied field of similar to0.1 T. The hysteretic behavior for the two types of junctions appeared to be very different. (C) 2003 American Institute of Physics.
引用
收藏
页码：5021 / 5026
页数：6
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