Effect of Nitridation of Hafnium Silicate Gate Dielectric on Positive Bias Temperature Instability in pMOS Devices

被引：0

作者：

Samanta, Piyas ^{[1
]}

Huang, Heng-Sheng ^{[2
]}

Chen, Shuang-Yuan ^{[2
]}

Liu, Chuan-Hsi ^{[3
]}

机构：

[1] Vidyasagar Coll Women, Dept Phys, 39 Sankar Ghosh Lane, Kolkata 700006, India

[2] Natl Taipei Univ Technol, Inst Mechatron Engn, Taipei 106, Taiwan

[3] Natl Taiwan Normal Univ, Dept Mechatron Technol, Taipei 106, Taiwan

来源：

2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2014年

关键词：

PBTI lifetime; threshold voltage shift; pMOS; HFSION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A detailed investigation of the effect of nitridation of hafnium silicate on positive bias temperature instability (PBTI) in n(+)-polySi gate pMOS capacitor structures has been presented. Our analysis shows that nitridation improves the intrinsic oxide breakdown field, reduces the equivalent oxide thickness (EOT) and as-grown surface state density D-it by an order of magnitude. On the other hand, like NBTI degradation, nitridation significantly enhances PBTI degradation in pMOS devices causing reduction in PBTI lifetime at a given applied voltage V-G. However, both nitrided and non-nitrided gate stacks reaches 10 year lifetime at an applied gate bias of 1.2 V.

引用

页数：2

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