Characterization of ion beam-induced SiC-OI structures by positron annihilation spectroscopy

被引：0
|
作者：
Maekawa, M. [1 ]
Yu, R. S. [1 ]
Kawasuso, A. [1 ]
机构：
[1] Japan Atom Energy Agcy, Adv Sci Res Ctr, Watanuki 1233, Takasaki, Gunma 3701292, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 10 | 2007年 / 4卷 / 10期
关键词：
D O I：
10.1002/pssc.200675822
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
Effect of oxygen ion implantation to SiC at 600 degrees C has been studied by positron annihilation spectroscopy using energy-variable slow positron beams. The Doppler broadening of annihilation radiation and positron lifetime measurements showed that vacancy defects survive and no SiO2 layer is formed in the asimplanted state. Following post-implantation annealing at 1400 degrees C, vacancy clusters were removed. Furthermore, a SiO2-like layer is formed in the oxygen-implanted region. An interface layer, which resembles that of the SiO2/SiC produced by conventional oxidation, was also found. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：3680 / +
页数：2
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