Scaling in back-illuminated GaN avalanche photodiodes

被引：31
|
作者：
Minder, K.
Pau, J. L.
McClintock, R.
Kung, P.
Bayram, C.
Razeghi, M. [1 ]
Silversmith, D.
机构：
[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA
[2] AF Off Sci Res, Arlington, VA 22203 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 07期
关键词：
D O I：
10.1063/1.2772199
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Avalanche p-i-n photodiodes of various mesa areas were fabricated on AlN templates for back illumination for enhanced performance through hole-initiated multiplication, and the effects of increased area on device performance were studied. Avalanche multiplication was observed in mesa sizes up to 14 063 mu m(2) under linear mode operation. Uniform gain and a linear increase of the dark current with area were demonstrated. (C) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [41] Simulation Study of Front-illuminated GaN Avalanche Photodiodes with Hole-initiated Multiplication
    Wang, Yangqian
    Zhang, Yuliang
    Yang, Yang A.
    Lu, Xing
    Zou, Xinbo
    2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
  • [42] Simulation study of front-illuminated GaN avalanche photodiodes with hole-initiated multiplication
    Wang, Yangqian
    Zhang, Yuliang
    Yang, Yang A.
    Lu, Xing
    Zou, Xinbo
    COGENT ENGINEERING, 2020, 7 (01):
  • [43] A method to realize hole-initiated multiplication in front-illuminated GaN avalanche photodiodes
    Zheng JiYuan
    Wang Lai
    Hao ZhiBiao
    Luo Yi
    2014 XXXITH URSI GENERAL ASSEMBLY AND SCIENTIFIC SYMPOSIUM (URSI GASS), 2014,
  • [44] Hydrophobicity of Back-Illuminated Polymer Film Surfaces
    Kallepalli, L. N. Deepak
    Godfrey, Alan T. K.
    Ratte, Jesse
    Corkum, P. B.
    2020 IEEE PHOTONICS CONFERENCE (IPC), 2020,
  • [45] High precision photometry with back-illuminated CCDs
    Jenkins, JM
    Borucki, WJ
    Dunham, EW
    McDonald, JS
    PLANETS BEYOND THE SOLAR SYSTEM AND THE NEXT GENERATION OF SPACE MISSIONS, 1997, 119 : 277 - 280
  • [46] Back-illuminated image sensors come to the forefront
    Imaging Systems Group, Sarnoff Corp., Princeton, NJ, United States
    Photonics Spectra, 2008, 8 (46-47)
  • [47] A novel method for the thermal analysis of GaN/AlGaN back-illuminated high power UV LEDs
    Kudsieh, N.
    Khizar, M.
    Raja, M. Y. A.
    MATERIALS RESEARCH EXPRESS, 2014, 1 (02):
  • [48] Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain
    Jiang, H
    Nakata, N
    Zhao, GY
    Ishikawa, H
    Shao, CL
    Egawa, T
    Jimbo, T
    Umeno, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (5B): : L505 - L507
  • [49] GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors
    Teke, A
    Dogan, S
    Yun, F
    Reshchikov, MA
    Le, H
    Liu, XQ
    Morkoç, H
    Zhang, SK
    Wang, WB
    Alfano, RR
    SOLID-STATE ELECTRONICS, 2003, 47 (08) : 1401 - 1408
  • [50] Back illuminated photodiodes for multislice CT
    Luhta, R
    Mattson, R
    Taneja, N
    Bui, P
    Vasbo, R
    MEDICAL IMAGING 2003: PHYSICS OF MEDICAL IMAGING, PTS 1 AND 2, 2003, 5030 : 235 - 245
12345