Scaling in back-illuminated GaN avalanche photodiodes

被引：31
|
作者：
Minder, K.
Pau, J. L.
McClintock, R.
Kung, P.
Bayram, C.
Razeghi, M. [1 ]
Silversmith, D.
机构：
[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA
[2] AF Off Sci Res, Arlington, VA 22203 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 07期
关键词：
D O I：
10.1063/1.2772199
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Avalanche p-i-n photodiodes of various mesa areas were fabricated on AlN templates for back illumination for enhanced performance through hole-initiated multiplication, and the effects of increased area on device performance were studied. Avalanche multiplication was observed in mesa sizes up to 14 063 mu m(2) under linear mode operation. Uniform gain and a linear increase of the dark current with area were demonstrated. (C) 2007 American Institute of Physics.
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