Evolution of height distribution of Ge islands on Si(1 0 0)

被引：7
|
作者：
Liu, JP [1 ]
Gong, Q [1 ]
Huang, DD [1 ]
Li, JP [1 ]
Sun, DZ [1 ]
Kong, MY [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 1999年 / 200卷 / 3-4期
关键词：
Ge islands; Ge films; bimodal distribution; Ehrlich-Schwoebel barriers;
D O I：
10.1016/S0022-0248(99)00069-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Evolution of the height distribution of Ge islands during in situ annealing of Ge films on Si(1 0 0) has been studied. Island height is found to have a bimodal distribution. The standard deviation of the island height divided by the mean island height, for the mode of larger island size is more than that for the other mode. We suggest that the presence of Ehrlich-Schwoebel barriers, combined with the misfit strain, can lead to the bimodal distribution of island size, the mode of larger island size having narrower base size distribution, but wider height distribution for Ge islands on Si(1 0 0). The bimodal distribution of island size could be stable due to kinetics without necessarily regarding it as minimum-energy configuration. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：617 / 620
页数：4
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