A High Speed SiC Thyristor Gate Driver for Pulse Power Applications

被引：0

作者：

Agamy, Mohammed ^{[1
]}

Tao, Fengfeng ^{[2
]}

Elasser, Ahmed ^{[3
]}

机构：

[1] SUNY Albany, Dept Elect & Comp Engn, Albany, NY 12222 USA

[2] Tesla, Palo Alto, CA USA

[3] GE Res, Elect Power, Niskayuna, NY USA

来源：

2019 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2019年

关键词：

Thyristor; SiC; Current Source; Gate Drive Circuit; Pulse Power; SWITCH;

D O I：

10.1109/ecce.2019.8913005

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper presents a current source gate driver for SiC thyristors in pulse power applications. The proposed driver provides a very high gate current slew rate while limiting the peak of the current pulse. The higher gate current slew rate achieves faster and thus more efficient device switching transition. In this paper, gate driver circuit description and experimental results for a 3kV SiC thyristor for a pulse power application are presented to verify the proposed concepts.

引用

页码：5694 / 5699

页数：6

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