Characterization of half-metallic L21-phase Co2FeSi full-Heusler alloy thin films formed by rapid thermal annealing

被引：23
|
作者：
Takamura, Yota [1 ]
Nakane, Ryosho [2 ]
Munekata, Hiro [1 ,3 ]
Sugahara, Satoshi [1 ,3 ]
机构：
[1] Tokyo Inst Technol, Dept Elect & Appl Phys, Yokohama, Kanagawa 2268502, Japan
[2] Univ Tokyo, Dept Elect Engn, Tokyo 1138656, Japan
[3] Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268502, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期
关键词：
D O I：
10.1063/1.2838648
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors developed a preparation technique of Co(2)FeSi full-Heusler alloy thin films with the L2(1)-ordered structure on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The Co(2)FeSi full-Heusler alloy films were successfully formed by RTA-induced silicidation reaction between an ultrathin SOI (001) layer and Fe/Co layers deposited on it. The highly (110)-oriented L2(1)-phase polycrystalline full-Heusler alloy films were obtained at the RTA temperature of 700 degrees C. Crystallographic and magnetic properties of the RTA-formed full-Heusler alloy films were qualitatively the same as those of bulk full-Heusler alloy. The proposed technique is compatible with metal source/drain formation process in advanced complementary metal-oxide semiconductor technology and would be applicable to the fabrication of the half-metallic source/drain of metal-oxide-semiconductor field-effect transistor type of spin transistors. (C) 2008 American Institute of Physics.
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页数：3
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