Dewetting and nanopattern formation of thin Pt films on SiO2 induced by ion beam irradiation

被引:62
|
作者
Hu, XY [1 ]
Cahill, DG
Averback, RS
机构
[1] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA
[2] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
关键词
D O I
10.1063/1.1372623
中图分类号
O59 [应用物理学];
学科分类号
摘要
Dewetting and nanopattern formation of 3-10 nm Pt thin films upon ion irradiation is studied using scanning electron microscopy (SEM). Lateral feature size and the fraction of exposed surface area are extracted from SEM images and analyzed as functions of ion dose. The dewetting phenomenon has little temperature dependence for 3 nm Pt films irradiated by 800 keV Kr+ at temperatures ranging from 80 to 823 K. At 893 K, the films dewet without irradiation, and no pattern formation is observed even after irradiation. The thickness of the Pt films, in the range 3-10 nm, influences the pattern formation, with the lateral feature size increasing approximately linearly with film thickness. The effect of different ion species and energies on the dewetting process is also investigated using 800 keV Kr+ and Ar+ irradiation and 19.5 keV He+, Ar+, Kr+, and Xe+ irradiation. The lateral feature size and exposed surface fraction scale with energy deposition density (J/cm(2)) for all conditions except 19.5 keV Xe+ irradiation. (C) 2001 American Institute of Physics.
引用
收藏
页码:7777 / 7783
页数:7
相关论文
共 50 条
  • [21] Nanoparticle formation in Au thin films by electron-beam-induced dewetting
    Kojima, Yasuhiko
    Kato, Takahisa
    NANOTECHNOLOGY, 2008, 19 (25)
  • [22] SIO2 THIN-FILMS DEPOSITED BY REACTIVE ION-BEAM SPUTTERING UNDER ULTRAVIOLET-LIGHT IRRADIATION
    NOMURA, K
    OGAWA, H
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (03) : 1469 - 1474
  • [23] Thermally activated dewetting of organic thin films: the case of pentacene on SiO2 and gold
    Kaefer, D.
    Woell, C.
    Witte, G.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 95 (01): : 273 - 284
  • [24] Thermally activated dewetting of organic thin films: the case of pentacene on SiO2 and gold
    D. Käfer
    C. Wöll
    G. Witte
    Applied Physics A, 2009, 95 : 273 - 284
  • [25] Electron beam induced conductivity in polymethyl methacrylate, polyimide, and SiO2 thin films
    Bai, M
    Pease, F
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 2907 - 2911
  • [26] Ion beam induced desorption from thin films:: SiO2 single layers andSiO2/Si multilayers
    Arnoldbik, WM
    Tomozeiu, N
    Habraken, FHPM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 190 : 433 - 438
  • [27] Swift heavy ion irradiation of Pt nanocrystals embedded in SiO2
    Giulian, R.
    Kluth, P.
    Sprouster, D. J.
    Araujo, L. L.
    Byrne, A.
    Ridgway, M. C.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (12-13): : 3158 - 3161
  • [28] DAMAGE CENTER FORMATION IN SIO2 THIN-FILMS BY FAST ELECTRON-IRRADIATION
    PFEFFER, RL
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5176 - 5180
  • [29] Ferroelectric liquid crystal aligned on SiO2 thin films using the ion beam deposition
    Li, Xihua
    Murauki, Anatoli
    Chigrinov, V. G.
    Khokhlov, A.
    Khoklov, E.
    IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2007, : 1681 - +
  • [30] Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films
    Tyschenko, I. E.
    Cherkov, A. G.
    Volodin, V. A.
    Voelskow, M.
    SEMICONDUCTORS, 2017, 51 (09) : 1240 - 1246