Room temperature growth of indium tin oxide thin films by ultraviolet-assisted pulsed laser deposition

Thin indium tin oxide (ITO) films were grown at room temperature on (1 0 0) Si and Coming glass by an in situ ulttaviolet-assisted pulsed laser deposition (UVPLD) technique. The oxygen pressure during the growth markedly influenced the properties of the films. For oxygen pressure below 1 mTorr; films exhibited very low optical transmittance and high resistivity. The resistivity decreased when using higher oxygen pressures while the optical transmittance increased, For a target-substrate distance of 10.5 cm, the optimum oxygen pressure was found to be around 10 mTorr. For higher oxygen pressures, the optical transmittance was higher but a rapid increase of the electrical resistivity was noticed. X-ray photoelectron spectroscopy showed that ITO films grown at 10 mTorr were fully oxidized, All grown films were amorphous regardless of the oxygen pressure used. (C) 2000 Published by Elsevier Science B.V.