MODELING METHOD OF LOCAL MISMATCH MODEL FOR MOS TRANSISTORS

被引：1
|
作者：
Gu, Jinglun [1 ]
机构：
[1] Shanghai Huali Microelect Corp, Div Technol Dev, Shanghai 201210, Peoples R China
来源：
2020 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2020 (CSTIC 2020) | 2020年
关键词：
D O I：
10.1109/cstic49141.2020.9282488
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, a MOS SPICE local mismatch model is presented, in which the temperature effect coefficient is added in the existing SPICE local mismatch model equation. The effect of temperature variation on SPICE local mismatch model of MOS devices is fully considered. This paper can accurately reflect the change of local mismatch with the change of temperature, so that the SPICE local mismatch model has a wider application range and a higher degree of coincidence with the measured data.
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页数：3
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