Seed layer dependent bottom pinned magnetic tunnel junctions

被引：0

作者：

Chen, Weibin ^{[1
,2
]}

Yan, Shaohua ^{[2
,3
]}

Yang, Yaodi ^{[2
]}

Cao, Zhiqiang ^{[2
,3
]}

Lin, Yixuan ^{[1
]}

Zhou, Zitong ^{[2
,3
]}

Yan, Shishen ^{[1
]}

Leng, Qunwen ^{[2
,3
,4
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan, Peoples R China

[2] Beihang Univ, Qingdao Res Inst, Beihang Geortek Joint Microelect Inst, Beijing, Peoples R China

[3] Beihang Univ, Sch Integrated Circuit Sci & Engn, Beijing, Peoples R China

[4] Goertek Inc, Weifang, Peoples R China

来源：

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年

关键词：

TMR; seed layers; coercivity and interlayer coupling; MAGNETORESISTANCE;

D O I：

10.1109/EDTM50988.2021.9420960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tunnel magnetoresistance (TMR) has been widely researched in sensor applications. The choice of seed layer materials has an important influence on the performance of sensors. Here, the effect of Ta/Ru, NiFeCr and Ta/NiFe seed layers on the TMR sensors are investigated. It is shown that the different structure caused by seed layers can affect the performance of TMR. By changing seed layers, the TMR multilayers can be tuned to satisfy the demand of applications.

引用

页数：3

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