Electrical and optical properties of ZnO-Fe2O3-SiO2 composite prepared by SOL-GEL method

被引：0

作者：

Canbay, C. Aksu ^{[1
]}

Altin, S. ^{[2
]}

Aydogdu, A. ^{[1
]}

Aydogdu, Y. ^{[1
]}

Yakinci, E. ^{[2
]}

机构：

[1] Firat Univ, Dept Phys, Elazig, Turkey

[2] Inonu Univ, Dept Phys, Malatya, Turkey

来源：

SIX INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION | 2007年 / 899卷

关键词：

composite; transition metal oxides; activation energy; semiconductor;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The semiconductor composite was prepared from ZnO, Fe2O3 and SiO2 transition metal oxides by sol-gel method. The surface morphology of the prepared samples were investigated by scanning electron microscopy (SEM). The activation energies of the samples in the extrinsic and intrinsic regions were found as 0.75 eV and 0.77 eV for ZFS-1 and 0.22 eV and 0.32eV for ZFS-2. The value of the optical band gap of the composite samples were calculated from the absorption coefficient depending on photon energy. The optical band gap of the samples were found as 1.60 eV and 1.70 eV for ZFS-1 and ZFS-2, respectively.

引用

页码：297 / +

页数：2

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